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During the 20th century, the emergence of vacuum tubes marks the era of electronics industry. To address the problems related to the vacuum tubes, solid state switches were invented. The first Si/Sio2 based MOSFET (Metal Oxide Semiconductor Field Effect Transistor) was illustrated by D. Kahng and M. Atalla in 1960 [1]. Since then, tremendous efforts are being carried out to scale the transistor size and to improve density of Integrated Circuits (ICs) while keeping the fabrication cost as low as possible. The device scaling also improves the operating frequency of Ochips. It was observed that the static power became higher than the actual active power because of the dimension scaling. This led the designers to change the device scaling approach. After a certain point of time, the device scaling became one of the reasons for the subthreshold degradation. This will be discussed in the following sections.
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