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Design of Low Leakage Quad Gate Stacked Nono-Sheets Finfet Device for Memory and Analog Circuit

Dr. Shaifali Ruhil, Dr. Vandana Khanna, Dr. Neeraj Kumar Shukla, Dr. Umesh Dutta
Type: Print Book
Genre: Education & Language
Language: English
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Description

During the 20th century, the emergence of vacuum tubes marks the era of electronics industry. To address the problems related to the vacuum tubes, solid state switches were invented. The first Si/Sio2 based MOSFET (Metal Oxide Semiconductor Field Effect Transistor) was illustrated by D. Kahng and M. Atalla in 1960 [1]. Since then, tremendous efforts are being carried out to scale the transistor size and to improve density of Integrated Circuits (ICs) while keeping the fabrication cost as low as possible. The device scaling also improves the operating frequency of Ochips. It was observed that the static power became higher than the actual active power because of the dimension scaling. This led the designers to change the device scaling approach. After a certain point of time, the device scaling became one of the reasons for the subthreshold degradation. This will be discussed in the following sections.

About the Authors

Dr. Shaifali Ruhil currently serves as an Assistant Professor at The NorthCap University, Gurugram. She completed her Ph.D from The NorthCap University in Very Large Scale Integration (VLSI). She received the M.Tech Degree in Electronics & Communication Engineering from Maharishi Dayanand University, Rohtak in 2015 and B.Tech Degree in Electronics & Communications from Manav Rachna International Institute of Research & Studies, Faridabad in 2013. She is the author of various papers published in international journals (SCI) and conference proceedings. She is serving as a reviewer in various reputed. She has qualified UGC-NET in Electronics in 2019. Her research interests encompass areas such as low power VLSI, device design, circuit design, and SRAMs.

Dr. Vandana Khanna
A self-starter and a dedicated professional, Dr. Vandana Khanna has an enriching experience of more than two decades in both academics and VLSI industry; Currently she is working as Associate Professor in The NorthCap University,...

Book Details

ISBN: 9798989862399
Publisher: GEH Press
Number of Pages: 156
Dimensions: A4
Interior Pages: B&W
Binding: Hard Cover (Case Binding)
Availability: In Stock (Print on Demand)

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